H30R1353 1350V 30A Reverse Conducting IGBT TO-247 for Induction Heating & Resonant Converters

The H30R1353 is the marking used for the Infineon IHW30N135R3, a high-voltage reverse-conducting IGBT with an integrated monolithic body diode, designed for high-power switching and soft-switching applications. It features a 1350V collector-emitter voltage rating and 30A collector current rating, making it suitable for demanding power electronics applications where high voltage capability and controlled switching performance are required. Infineon specifies the device in a PG-TO247-3 / TO-247 package.

The H30R1353 is particularly useful in induction heating systems, resonant converters, inverterized microwave ovens, and other soft-switching power circuits. Its reverse-conducting configuration integrates a monolithic diode into the IGBT structure, providing reverse-current conduction that is intended for soft commutation applications.

With a 1350V VCE rating, the H30R1353 provides a high voltage margin for suitable high-voltage switching designs. Its specified collector current is 30A, while the datasheet gives a typical collector-emitter saturation voltage of 1.65V at 25°C, 30A and 15V gate-emitter voltage. The maximum junction temperature is specified as 175°C.

The device uses a three-terminal TO-247 configuration. Pin 1 is Gate, Pin 2 is Collector, and Pin 3 is Emitter, while the rear metal tab is connected to the collector. Designers should always verify the pinout, electrical ratings, thermal requirements, gate-drive conditions, and switching conditions against the manufacturer datasheet before designing or repairing high-voltage equipment.

The H30R1353 is a useful choice for electronics students, engineers, technicians, repair professionals, and power-electronics developers working with induction cookers, resonant power supplies, inverter circuits, and high-voltage switching equipment. Its TRENCHSTOP technology, low VCE(sat), high voltage rating, and integrated monolithic body diode make it particularly relevant to soft-switching power converter designs.

For electronics projects and repair work in Bangladesh, the H30R1353 1350V 30A IGBT TO-247 can be considered when a high-voltage IGBT with reverse-conducting capability is required. Because this is a high-voltage power semiconductor, proper heatsinking, gate-drive design, PCB clearance, insulation, and electrical safety practices are essential.

Specifications:

The 30 A figure commonly associated with H30R1353 is the specified current at TC = 100°C; the datasheet's maximum continuous collector current is 60 A at TC = 25°C.

Main Features

• 1350 V high breakdown voltage
• Reverse-conducting IGBT with integrated monolithic diode
• TRENCHSTOP technology
• Low VCE(sat)
• Positive temperature coefficient of VCE(sat), supporting parallel operation
• Low EMI
• High ruggedness
• Diode designed for soft commutation
• RoHS compliant
• Pb-free lead plating
• Halogen-free
• Maximum junction temperature of 175°C

Typical Applications

The IHW30N135R3/H30R1353 is specifically intended for resonant and soft-switching power circuits, including:

• Induction cooking systems
• Inverterized microwave ovens
• Resonant converters
• Soft-switching converters
• High-voltage resonant power supplies

Infineon specifically identifies the integrated diode as being designed for soft commutation, so it should not simply be treated as a conventional hard-switching IGBT plus ordinary freewheel diode.

Electrical Characteristics

At TJ = 25°C, the datasheet specifies a collector-emitter breakdown voltage of 1350 V at VGE = 0 V and IC = 0.5 mA. With VGE = 15 V and IC = 30 A, typical VCE(sat) is 1.65 V. The gate threshold voltage is typically 5.8 V, with a specified range of 5.1 to 6.4 V.

The typical input, output and reverse-transfer capacitances are approximately 2066 pF, 67 pF and 58 pF, respectively, measured at VCE = 25 V, VGE = 0 V and 1 MHz. Typical gate charge is 263 nC under the datasheet test conditions.

Thermal Specifications

Pin Configuration

TO-247-3:

1 = Gate
2 = Collector
3 = Emitter

The metal backside/tab is also connected to the Collector.