H20R1203 20A 1200V Reverse Conducting IGBT, TO-247
The H20R1203 20A 1200V IGBT is the marking for the Infineon IHW20N120R3, a high-voltage reverse-conducting IGBT designed for resonant switching and soft-switching power electronics applications. It combines an IGBT with a monolithic body diode, making it suitable for circuits where controlled high-voltage switching and reverse current conduction are required. According to the Infineon datasheet, the device is rated for 1200V collector-emitter voltage and 20A DC collector current at 100°C case temperature, with a maximum junction temperature of 175°C. The specified typical VCE(sat) is 1.48V at 25°C.
The H20R1203 uses a PG-TO247-3 / TO-247 package with Gate, Collector, and Emitter terminals, providing a practical high-power package for thermal management and power switching designs. Infineon's TRENCHSTOP technology provides low VCE(sat), high ruggedness, temperature-stable behavior, and low EMI characteristics.
This 20A 1200V IGBT transistor is particularly suited to induction cooking equipment, inverterized microwave ovens, resonant converters, and soft-switching applications. Its integrated monolithic body diode is designed specifically for soft commutation, so designers should follow the manufacturer's switching and operating conditions rather than treating it as a general-purpose freewheeling diode.
For Bangladeshi electronics students, engineers, repair technicians, and power-electronics enthusiasts, the H20R1203 can be useful when repairing or developing high-voltage switching circuits, resonant power supplies, induction heating equipment, and inverter-based systems. When replacing an existing IGBT, always verify the voltage rating, current rating, switching topology, pin configuration, package, gate-drive requirements, thermal conditions, and datasheet specifications before installation.
The manufacturer datasheet also lists a maximum gate-emitter voltage of ±20V, a pulsed collector current of 60A, and a maximum junction temperature of 175°C under the specified conditions. These values are maximum ratings, not recommended continuous operating targets.
Specifications:
| Specification | Details |
|---|---|
| Product Marking | H20R1203 |
| Part Number | IHW20N120R3 |
| Device Type | Reverse Conducting IGBT |
| Technology | TRENCHSTOP |
| Collector-Emitter Voltage | 1200V |
| Collector Current | 20A at specified Tc condition |
| Typical VCE(sat) | 1.48V @ 25°C |
| Maximum Junction Temperature | 175°C |
| Gate-Emitter Voltage | ±20V |
| Package | PG-TO247-3 / TO-247 |
| Body Diode | Monolithic body diode |
| Main Applications | Resonant converters, induction cooking, soft switching |